Part number:
IPP64CN10N
Manufacturer:
Infineon ↗ Technologies
File Size:
405.36 KB
Description:
Power transistor.
* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on)
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualified according to JEDEC1) for target application Product Summary
IPP64CN10N Datasheet (405.36 KB)
IPP64CN10N
Infineon ↗ Technologies
405.36 KB
Power transistor.
📁 Related Datasheet
IPP600N25N3 - Power Transistor
(Infineon)
IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (.
IPP600N25N3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor IPP600N25N3,IIPP600N25N3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤60mΩ ·Enhancement mode ·Fast Switchin.
IPP600N25N3G - Power Transistor
(Infineon Technologies)
IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (.
IPP60R040C7 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R040C7,IIPP60R040C7
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.04Ω ·Enhancement mode ·Fast Switch.
IPP60R040C7 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ C7
600V CoolMOS™ C7 Power Transistor IPP60R040C7
Data Sheet
Rev. 2.0 Final
Power Man.
IPP60R060C7 - MOSFET
(Infineon)
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ C7
600V CoolMOS™ C7 Power Transistor IPP60R060C7
Data Sheet
Rev. 2.0 Final
Power Man.
IPP60R060C7 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
IPP60R060C7,IIPP60R060C7
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.06Ω ·Enhancement mode ·Fast Switch.
IPP60R060P7 - MOSFET
(Infineon)
IPP60R060P7
MOSFET
600V CoolMOSª P7 Power Transistor
The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFET.