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1EDI3030AS Datasheet - Infineon

Single channel isolated SiC-MOSFET driver

1EDI3030AS Features

* Single channel isolated SiC driver using coreless transformer technology

* For SiC-MOSFETs up to 1200 V

* CMTI up to 150 V/ns at 1000 V

* Reinforced insulation 8 kV peak according to DIN EN IEC 60747-17 (VDE 0884-17) : 2021-10

* 5.7 kV rms insulation accordi

1EDI3030AS General Description

The EiceDRIVER™ gate driver 1EDI3030AS is a high-voltage SiC-MOSFET driver designed for automotive motor drives above 5 kW. The device is based on Infineon’s coreless transformer (CT) technology, providing galvanic insulation between low voltage and high voltage domains. The device has been designed.

1EDI3030AS Datasheet (0.96 MB)

Preview of 1EDI3030AS PDF

Datasheet Details

Part number:

1EDI3030AS

Manufacturer:

Infineon ↗

File Size:

0.96 MB

Description:

Single channel isolated sic-mosfet driver.

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1EDI3030AS Single channel isolated SiC-MOSFET driver Infineon

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