1EDI3030AS Datasheet - Infineon

1EDI3030AS Single channel isolated SiC-MOSFET driver

The EiceDRIVER™ gate driver 1EDI3030AS is a high-voltage SiC-MOSFET driver designed for automotive motor drives above 5 kW. The device is based on Infineon’s coreless transformer (CT) technology, providing galvanic insulation between low voltage and high voltage domains. The device has been designed.

1EDI3030AS Features

* Single channel isolated SiC driver using coreless transformer technology

* For SiC-MOSFETs up to 1200 V

* CMTI up to 150 V/ns at 1000 V

* Reinforced insulation 8 kV peak according to DIN EN IEC 60747-17 (VDE 0884-17) : 2021-10

* 5.7 kV rms insulation accordi

1EDI3030AS-Infineon.pdf