1EDI3035AS Datasheet - Infineon

1EDI3035AS Single channel isolated SiC-MOSFET driver

Description The EiceDRIVER™ gate driver 1EDI3035AS is a high voltage galvanic isolated SiC-MOSFET driver designed for high voltage automotive applications. The device is based on Infineon’s coreless transformer (CT) technology providing 8 kV galvanic insulation between low voltage and high voltage.

1EDI3035AS Features

* Galvanic isolated SiC-MOSFET driver using coreless transformer technology

* Single channel driver for SiC-MOSFETs up to 1200 V

* Low propagation delay 60 ns typically

* Split outputs TON and TOFF for independent turn-on and turn-off slew rates

* Integrated b

1EDI3035AS-Infineon.pdf