1EDI3035AS - Single channel isolated SiC-MOSFET driver

Infineon

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Datasheet Details

Part number	1EDI3035AS
Manufacturer	Infineon
File Size	1.12 MB
Description	Single channel isolated SiC-MOSFET driver
Datasheet	1EDI3035AS-Infineon.pdf

1EDI3035AS Product details

Description

Description The EiceDRIVER™ gate driver 1EDI3035AS is a high voltage galvanic isolated SiC-MOSFET driver designed for high voltage automotive applications.The device is based on Infineon’s coreless transformer (CT) technology providing 8 kV galvanic insulation between low voltage and high voltage domains.The IC supports up to 1200 V SiC-MOSFETs and is ideally suitable to drive the IGBT + SiC HybridPACK™ Drive G2 Fusion module.The device

Features

Galvanic isolated SiC-MOSFET driver using coreless transformer technology.
Single channel driver for SiC-MOSFETs up to 1200 V.
Low propagation delay 60 ns typically.
Split outputs TON and TOFF for independent turn-on and turn-off slew rates.
Integrated booster with up to 20 A peak current rail-to-rail output.
Integrated active Miller clamp supports unipolar switching.
Configurable external soft turn-off functionality.
12- b.

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Published: May 14, 2025 |