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2ED2182S06F 650V half-bridge gate driver

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Description

2ED2182 (4) S06F (J) 2ED2182 (4) S06F (J) 650 V half-bridge gate driver with integrated bootstrap diode .
The 2ED2182(4)S06F(J) is a half-bridge high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output cha.

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Features

* Unique Infineon Thin-Film-Silicon on Insulator (SOI)-Technology
* Negative VS transient immunity of 100 V
* Floating channel designed for bootstrap operation
* Operating voltages (VS node) upto + 650 V
* Maximum bootstrap voltage (VB node) of + 675 V
* Integrated ultra-fast

Applications

* Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications. Typical Infineon recommendations are as below:
* Motor drives, general purpose inverters having TRENCHSTOP™ IGBT6 or 600 V EasyPACK™ modules
* Refrigeration compressors, induction cookers, other major

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