Datasheet Details
Part number:
2ED21834S06J, 2ED2182S06F
Manufacturer:
File Size:
1.35 MB
Description:
650v half-bridge gate driver.
Note:
This datasheet PDF includes multiple part numbers: 2ED21834S06J, 2ED2182S06F.
Please refer to the document for exact specifications by model.
2ED21834S06J, 2ED2182S06F, 650V half-bridge gate driver
The 2ED2182(4)S06F(J) is a half-bridge high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negativ
2ED21834S06J Features
* Unique Infineon Thin-Film-Silicon on Insulator (SOI)-Technology
* Negative VS transient immunity of 100 V
* Floating channel designed for bootstrap operation
* Operating voltages (VS node) upto + 650 V
* Maximum bootstrap voltage (VB node) of + 675 V
* Integrated ultra-fast
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