2EDF5215G, 2EDF5215F Datasheet - Infineon

2EDF5215G high-side and low-side gate driver

EiceDRIVER™ 2EDF5215F, 2EDF5215G 250 V, 5 A/9 A high-side and low-side gate driver ICs EiceDRIVER™ 2EDF5215F and 2EDF5215G are designed to drive low-side and high-side MOSFETs. A strong output stage, together with a low part-to-part skew and fast signal propagation makes these products ideal for use in fast-switching power systems. The inputs are independently controlled and can overlap enabling the use in synchronous rectifiers and full-bridge with diagonal driving scheme. The outputs are matc.

2EDF5215G Features

* 250 V high and low-side gate driver

* -250 V negative HS transient immunity due to galvanic isolation

* 100 V/ns dV/dt robustness due to CT technology

* 5 A / 9 A source / sink capability

* +9 ns /-5 ns delay accuracy

* 4 ns maximum delay matching

2EDF5215F-Infineon.pdf