* 250 V high and low-side gate driver
* -250 V negative HS transient immunity due to galvanic isolation
* 100 V/ns dV/dt robustness due to CT technology
* 5 A / 9 A source / sink capability
* +9 ns /-5 ns delay accuracy
* 4 ns maximum delay matching
2EDF5215G
1.82 MB
High-side and low-side gate driver.
EiceDRIVER™ 2EDF5215F, 2EDF5215G 250 V, 5 A/9 A high-side and low-side gate driver ICs EiceDRIVER™ 2EDF5215F and 2EDF5215G are designed to drive low-.
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