2EDL23N06PJ, 2EDL23I06PJ - 600V Half Bridge Gate Driver

Infineon

2EDL23N06PJ Datasheet Preview — This datasheet PDF includes multiple part numbers: 2EDL23N06PJ, 2EDL23I06PJ. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	2EDL23N06PJ, 2EDL23I06PJ
Manufacturer	Infineon ↗
File Size	1.15 MB
Description	600V Half Bridge Gate Driver
Datasheet	2EDL23I06PJ-Infineon.pdf
Note	This datasheet PDF includes multiple part numbers: 2EDL23N06PJ, 2EDL23I06PJ. Please refer to the document for exact specifications by model.

2EDL23N06PJ Product details

Description

The 2EDL family contains devices, which control power devices like MOS-transistors or IGBTs with a maximum blocking voltage of +600 V in half bridge configurations.

Features

Infineon thin-film-SOI-technology.
Fully operational to +600 V.
Integrated Ultra-fast, low RDS(ON) Bootstrap Diode.
Floating channel designed for bootstrap operation.
Output source/sink current capability +1.8 A/-2.5 A.
Tolerant to negative transient voltage up to -100 V (Pulse width is up 300 ns) given by SOI-technology.
Interlock, Enable, Fault, and over current protection.
10 ns typ. , 60 ns max. propagation delay matching.
dV/dt immune ±50 V.

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Other Datasheets by Infineon

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Published: Dec 3, 2016 |