6ED003L06-F2 Datasheet - Infineon

6ED003L06-F2 200V 3-phase gate driver

The devices are full bridge drivers to control power devices like MOSFET or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence,.

6ED003L06-F2 Features

* Infineon thin-film-SOI-technology

* Maximum blocking voltage +600 V

* Output source/sink current +0.165 A/-0.375 A

* Insensitivity of the bridge output to negative transient voltages up to -50 V given by SOItechnology

* Separate control circuits for all six

6ED003L06-F2 Datasheet (663.03 KB)