AIKQ200N75CP2 - EDT2 IGBT and emitter controlled diode

Infineon

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Datasheet Details

Part number	AIKQ200N75CP2
Manufacturer	Infineon
File Size	1.30 MB
Description	EDT2 IGBT and emitter controlled diode
Datasheet	AIKQ200N75CP2-Infineon.pdf

AIKQ200N75CP2 Product details

Description

C TO-247PLUS 3Pin 2021-10-27 restricted Copyright © Infineon Te Type AIKQ200N75CP2 G E Package PG-TO247PLUS-3 Marking AKQ20FCP Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2022-03-16 AIKQ200N75CP2 EDT2 IGBT Table of contents Table of contents Description

Features

VCE = 750 V.
IC = 200 A.
Best-in-class highest power density, IC = 200 A.
750 V collector-emitter blocking voltage capability.
Suitable for 470 V VDC systems and increase overvoltage margin for 400 V VDC systems.
Very low VCE(sat), 1.30 V at ICnom = 200 A, 25°C.
Short circuit robust tsc = 5 µs at VCE = 470 V, VGE = 15 V.
Self limiting current under short circuit condition.
Positive thermal coefficient and very tigh.

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Published: May 14, 2025 |