BFP650F - Linear Low Noise SiGe:C Bipolar RF Transistor
Linear Low Noise SiGe:C Bipolar RF Transistor For medium power amplifiers and driver stages Based on Infineon' s reliable high volume Silicon Germanium technology High OIP3 and P-1dB Ideal for low phase noise oscilators Maxim.
available Gain Gma = 21.5 dB at 1.8 GHz Minimun noise figure NFmin = 0.8 dB at 1.8 GHz Pb-free (RoHS compliant) and halogen-free thin small flat package with visible leads Qualification report according
