BFP650F Datasheet - Infineon

BFP650F Linear Low Noise SiGe:C Bipolar RF Transistor

Linear Low Noise SiGe:C Bipolar RF Transistor For medium power amplifiers and driver stages Based on Infineon' s reliable high volume Silicon Germanium technology High OIP3 and P-1dB Ideal for low phase noise oscilators Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Minimun noise figure NFmin = 0.8 dB at 1.8 GHz Pb-free (RoHS compliant) and halogen-free thin small flat package with visible leads Qualification report according .

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Datasheet Details

Part number:

BFP650F

Manufacturer:

Infineon ↗

File Size:

544.79 KB

Description:

Linear low noise sige:c bipolar rf transistor.

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BFP650F BFP650F Linear Low Noise SiGeC Bipolar Transistor Infineon

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