BFP620F Low profile high gain silicon NPN RF bipolar transistor

Infineon Technologies AG

Description

BFP620F Low profile high gain silicon NPN RF bipolar transistor Product .
The BFP620F is a RF bipolar transistor based on SiGe:C technology that is part of Infineon’s established sixth generation transistor family.

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Datasheet Specifications

Part number: BFP620F
Manufacturer: Infineon ↗ Technologies AG
File Size: 315.94 KB
Datasheet: BFP620F_InfineonTechnologiesAG.pdf
Description: Low profile high gain silicon NPN RF bipolar transistor

Applications

* according to the relevant tests of JEDEC JESD47, JESD22, and J-STD-020. Qualified for industrial applications according to the relevant tests of AEC-Q 101. Potential applications
* Low noise amplifiers (LNAs) in SDARS receivers
* LNAs for wireless communications
* LNAs for I

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BFP620F Low profile high gain silicon NPN bipolar transistor Infineon Technologies AG

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