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BFP620F Datasheet - Infineon Technologies AG

BFP620F Low profile high gain silicon NPN RF bipolar transistor

The BFP620F is a RF bipolar transistor based on SiGe:C technology that is part of Infineon’s established sixth generation transistor family. Its high gain and low noise characteristics make the device suitable for frequencies as high as 6 GHz. It remains cost competitive without compromising on ease.

BFP620F_InfineonTechnologiesAG.pdf

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Datasheet Details

Part number:

BFP620F

Manufacturer:

Infineon ↗ Technologies AG

File Size:

315.94 KB

Description:

Low profile high gain silicon npn rf bipolar transistor.

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BFP620F BFP620F Low profile high gain silicon NPN bipolar transistor Infineon Technologies AG

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