BSC060N10NS3 Power-MOSFET Datasheet - 4586 In Stock - Infineon

📁 Related Datasheet

BSC060N10NS3G - Power-MOSFET (Infineon)
OptiMOSTM3 Power-Transistor Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level.

BSC060P03NS3EG - Power-MOSFET (Infineon)
OptiMOSTM P3 Power-Transistor Features • single P-Channel in SuperSO8 • Qualified according JEDEC1) for target applications • 150 °C operating tempera.

BSC061N08NS5 - MOSFET (Infineon)
BSC061N08NS5 MOSFET OptiMOSTM5 Power-Transistor, 80 V Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Super.

BSC066N06NS - Power-Transistor (Infineon)
Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .

BSC067N06LS3G - Power-MOSFET (Infineon)
Type OptiMOSTM3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent.

BSC004NE2LS5 - MOSFET (Infineon)
BSC004NE2LS5 MOSFET OptiMOSTM 5 Power-Transistor, 25 V Features • Optimized for OR-ing application • Very low on-resistance RDS(on) @ VGS=4.5 V • 100.

BSC005N03LS5 - MOSFET (Infineon)
BSC005N03LS5 MOSFET OptiMOSTM 5 Power-Transistor, 30 V Features • Very low on-resistance RDS(on) @ VGS=4.5 V • Optimized charges for fast switching •.

BSC007N04LS6 - MOSFET (Infineon)
BSC007N04LS6 MOSFET OptiMOSTM 6 Power-Transistor, 40 V Features • Optimized for synchronous application • Very low on-resistance RDS(on) • 100% avala.

BSC009NE2LS - Power-MOSFET (Infineon)
BSC009NE2LS MOSFET OptiMOSTM Power-MOSFET, 25 V Features • Optimized for e-fuse and ORing application • Very low on-resistance RDS(on) @ VGS=4.5 V • .

BSC009NE2LS5 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 25 V BSC009NE2LS5 Data Sheet Rev. 2.0 Final Power Manageme.

Stock and price