📁 CFY25-23 Similar Datasheet
    
- CFY25-20  - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
 
- CFY25-17  - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
 
- CFY25  - GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) (Siemens Semiconductor Group)
 
- CFY27  - HiRel Ku-Band GaAs General Purpose MESFET (Infineon Technologies AG)
 
- CFY27-38  - HiRel Ku-Band GaAs General Purpose MESFET (Infineon Technologies AG)
 
- CFY27-P  - HiRel Ku-Band GaAs General Purpose MESFET (Infineon Technologies AG)
 
- CFY30  - GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) (Siemens Semiconductor Group)
 
- CFY35  - GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) (Siemens Semiconductor Group)