D1265C5 - SiC Schottky Barrier diodes
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics
D1265C5 Features
* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independent switching behavior
* High surge current capability
* Pb-free lead plating; RoHS compliant
* Qualified according to
