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DF160R12W2H3F_B11

IGBT

DF160R12W2H3F_B11 Features

* CoolSiC (TM) Schottky diode gen 5

* High speed IGBT H3

* Low switching losses

* thinQH SiC Schottky diode 1200V Mechanical Features

* 3 kV AC 1min insulation

* Al2O3 substrate with low thermal resistance

* Integrated NTC temperature sensor

DF160R12W2H3F_B11 Datasheet (722.50 KB)

Preview of DF160R12W2H3F_B11 PDF

Datasheet Details

Part number:

DF160R12W2H3F_B11

Manufacturer:

Infineon ↗

File Size:

722.50 KB

Description:

Igbt.
DF160R12W2H3F_B11 EasyPACK Modul mit schnellem Trench/Feldstopp High-Speed 3 IGBT und SiC Diode und PressFIT / NTC EasyPACK module with fast Trench/Fi.

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DF160R12W2H3F_B11 IGBT Infineon

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