DF160R12W2H3F_B11 Datasheet - Infineon

DF160R12W2H3F_B11 IGBT

DF160R12W2H3F_B11 EasyPACK Modul mit schnellem Trench/Feldstopp High-Speed 3 IGBT und SiC Diode und PressFIT / NTC EasyPACK module with fast Trench/Fieldstop High-Speed 3 IGBT and SiC diode and PressFIT / NTC Typische Anwendungen Solar Anwendungen Elektrische Eigenschaften CoolSiC (TM) Schottky Diode Gen 5 High Speed IGBT H3 Niedrige Schaltverluste thinQH SiC Schottky-Diode 1200V Mechanische Eigenschaften 3 kV AC 1min Isolationsfestig.

DF160R12W2H3F_B11 Features

* CoolSiC (TM) Schottky diode gen 5

* High speed IGBT H3

* Low switching losses

* thinQH SiC Schottky diode 1200V Mechanical Features

* 3 kV AC 1min insulation

* Al2O3 substrate with low thermal resistance

* Integrated NTC temperature sensor

DF160R12W2H3F_B11-Infineon.pdf