F3L500R12W3H7_H11 Datasheet - Infineon

F3L500R12W3H7_H11 IGBT

- Datasheet www.infineon.com 04 |nderung des Bohrbildes Please read the sections "Import0a3nt noLtaicyeo"uatndnd"Weraurnngingasl"taVt t5h.e7enneduofVth7i.s3document 02 Layoutnderung, Zwei Pine (P1,N1) pro Substrat hinzu steimark steim Rebvisiskioonpi1n.0g0m 2024o-0r2-29 steim bertalan berta .

F3L500R12W3H7_H11 Features

* Electrical features - VCES = 1200 V - IC nom = 500 A / ICRM = 1000 A - Ultra fast IGBT chips - Low ind-ucDtievteadilessiganbout hole specification for contacts refer to AN2009-01 chapter 2 - Low sw-itcDhiinagmleotsesress of drill P1,15mm - Low VCE-,saCt opper thickness in hole 25~50um - Su

F3L500R12W3H7_H11 Datasheet (1.96 MB)