* High DC stability
* High short-circuit capability
* Low VCEsat
* Tvj op = 150°C
* Trench IGBT 4
* VCEsat with positive temperature coefficient Mechanical Features
* Al2O3 substrate with low thermal resistance
* High power density
F4-150R17ME4_B11 Datasheet (571.70 KB)
F4-150R17ME4_B11
571.70 KB
Igbt.
F4-150R17ME4_B11 EconoDUAL™3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 Diode EconoDUAL™3 module with Trench/Fieldstop IGBT4 and Emitte.
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