F4-3L50R07W2H3F_B11 Datasheet - Infineon

F4-3L50R07W2H3F_B11 IGBT

F4-3L50R07W2H3F_B11 EasyPACK Modul mit schnellem Trench/Feldstopp High-Speed 3 IGBT und SiC Diode und PressFIT / NTC EasyPACK module with fast Trench/Fieldstop High-Speed 3 IGBT and SiC diode and PressFIT / NTC Typische Anwendungen 3-Level-Applikationen Motorantriebe Solar Anwendungen USV-Systeme Elektrische Eigenschaften CoolSiC (TM) Schottky Diode Gen 5 High Speed IGBT H3 Niedrige Schaltverluste Mechanische Eigenschaften

F4-3L50R07W2H3F_B11 Features

* CoolSiC (TM) Schottky diode gen 5

* High speed IGBT H3

* Low switching losses Mechanical Features

* 3 kV AC 1min insulation

* Al2O3 substrate with low thermal resistance

* Compact design

* PressFIT contact technology

* Rugged mounting

F4-3L50R07W2H3F_B11 Datasheet (1.09 MB)