FP100R07N3E4_B11 Datasheet - Infineon

FP100R07N3E4_B11 IGBT

Technische Information / Technical Information IGBT-Module IGBT-modules FP100R07N3E4_B11 EconoPIM™3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und PressFIT / NTC EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and PressFIT / NTC Vorläufige Daten / Preliminary Data VCES = 650V IC nom = 100A / ICRM = 200A Typische Anwendungen Motorantriebe Elektrische Eigenschaften Erhöhte Sperrspannungsfestigkeit auf 650V Hohe Kurzsc.

FP100R07N3E4_B11 Features

* Increased blocking voltage capability to 650V

* High Short Circuit Capability, Self Limiting Short Circuit Current

* Trench IGBT 4

* Tvj op = 150°C

* VCEsat with positive Temperature Coefficient Mechanical Features

* Integrated NTC temperature senso

FP100R07N3E4_B11 Datasheet (845.84 KB)