FP10R12W1T4P Datasheet - Infineon

FP10R12W1T4P IGBT

FP10R12W1T4P EasyPIM™ Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC / TIM EasyPIM™ module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC / TIM VCES = 1200V IC nom = 10A / ICRM = 20A Typische Anwendungen Hilfsumrichter Klimaanlagen Motorantriebe Elektrische Eigenschaften Niedrige Schaltverluste Niedriges VCEsat Trench IGBT 4 VCEsat mit positivem Temperaturko.

FP10R12W1T4P Features

* Low switching losses

* Low VCEsat

* Trench IGBT 4

* VCEsat with positive temperature coefficient Mechanical Features

* Al2O3 substrate with low thermal resistance

* Compact design

* Solder contact technology

* Rugged mounting due to

FP10R12W1T4P-Infineon.pdf