FP10R12W1T4_B3 Datasheet - Infineon

FP10R12W1T4_B3 IGBT

Technische Information / Technical Information IGBT-Module IGBT-modules FP10R12W1T4_B3 EasyPIM™ Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC EasyPIM™ module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC Vorläufige Daten / Preliminary Data J VCES = 1200V IC nom = 10A / ICRM = 20A Typische Anwendungen Hilfsumrichter Klimaanlagen Motorantriebe Elektrische Eigenschaften Niedrige Schaltverluste Tre.

FP10R12W1T4_B3 Features

* Low Switching Losses

* Trench IGBT 4

* VCEsat with positive Temperature Coefficient

* Low VCEsat Mechanical Features

* Al2O3 Substrate with Low Thermal Resistance

* Compact design

* Solder Contact Technology

* Rugged mounting due to

FP10R12W1T4_B3-Infineon.pdf