FS800R07A2E3 Datasheet, Igbt-module, Infineon

FS800R07A2E3 Features

  • Igbt-module
  • Increased blocking voltage capability to 650V
  • High Current Density
  • Low Inductive Design
  • Low Switching Losses
  • Tvj op = 150°C
  • T

PDF File Details

Part number:

FS800R07A2E3

Manufacturer:

Infineon ↗

File Size:

785.46kb

Download:

📄 Datasheet

Description:

Igbt-module.

Datasheet Preview: FS800R07A2E3 📥 Download PDF (785.46kb)
Page 2 of FS800R07A2E3 Page 3 of FS800R07A2E3

FS800R07A2E3 Application

  • Applications
  • Automotive Applications
  • Hybrid Electrical Vehicles (H)EV
  • Commercial Agriculture Vehicles
  • Motor

TAGS

FS800R07A2E3
IGBT-Module
Infineon

📁 Related Datasheet

FS8025B - USB Type-C PD Fast Charging Protocol Intelligent Trigger (Fansea)
、: USB Type_C PD 、: FS8025B 1. USB Type-C PD3.0 ( PPS) 2. USB Type-C PD3.1 ( PPS) 3. A 4. 5. 6. 7. emarker 、: 1. 2. 3. 4. 5. 6. USB.

FS8107E - Low Power Phase-Locked Loop IC (Himark)
.. FS8107E Low Power Phase-Locked Loop IC the wireless IC pany HiMARK Technology, Inc. reserves the right to change the product .

FS8108 - Low Power Phase-Locked Loop IC (Himark)
.. FS8108 Low Power Phase-Locked Loop IC the wireless IC pany HiMARK Technology, Inc. reserves the right to change the product d.

FS8160 - Dual Phase-locked Loop IC (Himark)
.. FS8160 1.1 GHz/1.1 GHz Dual Phase-locked Loop IC HiMARK Technology, Inc. reserves the right to change the product described in th.

FS8170 - Low Power Phase-locked Loop IC (Himark)
.. FS8170 2.5 GHz Low Power Phase-locked Loop IC HiMARK Technology, Inc. reserves the right to change the product described in this .

FS8205 - Dual N-Channel Power MOSFET (Fortune Semiconductor)
REV. 1.0 FS8205-DS-10_EN AUG 2009 Datasheet FS8205 Dual N-Channel Enhancement Mode Power MOSFET Fo F P r R ro SC ef pe ’ er rti en es ce O nl y.

FS8205A - N-Channel MOSFET (FUXINSEMI)
Product Summary V(BR)DSS RDS(on)MAX ID 25mΩ@4.5V 20V 6A 32mΩ@2.5V FS8205A N-Channel Enhancement Mode MOSFET Feature Advanced trench process t.

FS8205A - Dual N-Channel Enhancement Mode Power MOSFET (Fortune Semiconductor)
REV. 1.6 FS8205A-DS-16_EN MAY 2014 For RefPerrFoepOnecRrteTieUOsnNlEy' Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET For RefPerrF.

FS8205A - Dual N-Channel MOSFET (CanSheng Industry)
ShenZhen CanSheng Industry Development Co.,Ltd. .szcansheng. FS8205A Dual N-Channel Enhancement Mode MOSFET Features z 20V/6A, RDS(ON)<25mΩ @.

FS820R08A6P2B - Drive Module (Infineon)
HybridPACK™ Drive Module FS820R08A6P2B Final Data Sheet V3.1, 2019-10-10 Automotive High Power FS820R08A6P2B HybridPACK™ Drive Module 1 Features.

Stock and price

Infineon Technologies AG
MOD IGBT MED PWR ECOHY2-1
DigiKey
FS800R07A2E3IBPSA1
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts