* Increased blocking voltage capability to 650V
* High Current Density
* Low Inductive Design
* Low Switching Losses
* Tvj op = 150°C
* Trench IGBT
FS800R07A2E3 Datasheet (785.46 KB)
FS800R07A2E3
785.46 KB
Igbt-module.
Technische Information / Technical Information IGBT-Modul IGBT-Module FS800R07A2E3 HybridPACK™2 Modul mit Trench/Feldstopp IGBT3 und Emitter Contro.
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