Datasheet4U Logo Datasheet4U.com

IDH02G120C5

Diode

IDH02G120C5 Features

* Revolutionary semiconductor material - Silicon Carbide

* No reverse recovery current / No forward recovery

* Temperature independent switching behavior

* Low forward voltage even at high operating temperature

* Tight forward voltage distribution

* Excellent thermal perform

IDH02G120C5 General Description

2 Table of Contents3 Maximum Ratings 4 Thermal Resistances 4 Electrical Characterics 5 Electrical Characteristics Diagram 6 Package Drawings 9 Revision History 10 Disclaimer 11 Final Data Sheet 3 Rev. 2.1, 2017-07-21 Maximum ratings Parameter Repetitive peak reverse voltage Continues forward cur.

IDH02G120C5 Datasheet (874.59 KB)

Preview of IDH02G120C5 PDF

Datasheet Details

Part number:

IDH02G120C5

Manufacturer:

Infineon ↗

File Size:

874.59 KB

Description:

Diode.
Diode Silicon Carbide Schottky Diode IDH02G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Final Datasheet Rev. 2.1 2017-07-21 Industrial Powe.

📁 Related Datasheet

IDH02G65C5 - 650V SiC Schottky Diode (Infineon)
SiC Silicon Carbide Diode 5th Generation thinQ TM 650V SiC Schottky Diode IDH02G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimark.

IDH02SG120 - Schottky Diode (Infineon Technologies)
IDH02SG120 3rd Generation thinQ TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmar.

IDH03G65C5 - Silicon Carbide Diode (Infineon)
SiC Silicon Carbide Diode 5th Generation thinQ TM 650V SiC Schottky Diode IDH03G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimark.

IDH03SG60C - Schottky Diode (Infineon Technologies)
3rd Generation thinQ TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No rever.

IDH04G65C5 - Silicon Carbide Diode (Infineon)
SiC Silicon Carbide Diode 5th Generation thinQ TM 650V SiC Schottky Diode IDH04G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimark.

IDH04G65C6 - SiC Schottky Diode (Infineon)
IDH04G65C6 6th Generation CoolSiC™ 650V SiC Schottky Diode The CoolSiC™ generation 6 (G6) is the leading edge technology from Infineon for the SiC Sc.

IDH04S60C - Schottky Diode (Infineon Technologies)
IDH04S60C 2ndGeneration thinQ TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark .

IDH04SG60C - Schottky Diode (Infineon Technologies)
3rd Generation thinQ TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No rever.

TAGS

IDH02G120C5 Diode Infineon

Image Gallery

IDH02G120C5 Datasheet Preview Page 2 IDH02G120C5 Datasheet Preview Page 3

IDH02G120C5 Distributor