* Best in class forward voltage (1.25 V)
* Best in class figure of merit (Qc x VF)
* High dv/dt ruggedness (150 V/ns) Benefits
* System efficiency improvement
* System cost and size savings due to the reduced cooling requirements
* Enabling higher frequency and increased pow
IDH04G65C6 Datasheet (952.24 KB)
IDH04G65C6
952.24 KB
Sic schottky diode.
IDH04G65C6
6th Generation CoolSiC™
650V SiC Schottky Diode
The CoolSiC™ generation 6 (G6) is the leading edge technology from Infineon for the SiC Sc.
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