IDH03G65C5 Datasheet - Infineon

IDH03G65C5, Silicon Carbide Diode

SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDH03G65C5 Final Datasheet Rev.
2.2, 2012-12-10 Power Management & Multimark

Features

* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independent switching behavior
* High surge current capability
* Pb-free lead plating; RoHS compliant
* Qualified according to

Applications

* Breakdown voltage tested at 6.8 mA2)
* Optimized for high temperature operation Benefits
* System efficiency improvement over Si diodes
* System cost / size savings due to reduced cooling requirements
* Enabling higher frequency / increased power density solutions
* Highe

IDH03G65C5-Infineon.pdf