IDH04G65C5 Datasheet - Infineon

IDH04G65C5, Silicon Carbide Diode

SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDH04G65C5 Final Datasheet Rev.2.2, 2012-12-10 Power Management & Multimark.
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

datasheet Preview Page 1 from Datasheet4u.com

IDH04G65C5-Infineon.pdf

IDH04G65C5 Datasheet Preview — Preview of IDH04G65C5 PDF

Datasheet Details

Part number:

IDH04G65C5

Manufacturer:

Infineon ↗

File Size:

1.14 MB

Description:

Silicon Carbide Diode

Features

* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independent switching behavior
* High surge current capability
* Pb-free lead plating; RoHS compliant
* Qualified according to

Applications

* Breakdown voltage tested at 9 mA2)
* Optimized for high temperature operation Benefits
* System efficiency improvement over Si diodes
* System cost / size savings due to reduced cooling requirements
* Enabling higher frequency / increased power density solutions
* Higher

IDH04G65C5 Distributors

📁 Related Datasheet

IDH04S60C IDH04SG60C IDH02SG120 IDH03SG60C IDH05S120 IDH05S60C

📌 All Tags

IDH04G65C5 Silicon Carbide Diode Infineon

Infineon IDH04G65C5-like datasheet