IDH04G65C5

Silicon Carbide Diode

Infineon

IDH04G65C5 Features

* Revolutionary semiconductor material - Silicon Carbide

* Benchmark switching behavior

* No reverse recovery/ No forward recovery

* Temperature independent switching behavior

* High surge current capability

* Pb-free lead plating; RoHS compliant

* Qualified according to

IDH04G65C5 General Description

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products sh.

IDH04G65C5 Datasheet (1.14 MB)

IDH04G65C5 Datasheet Preview — Preview of IDH04G65C5 PDF

Datasheet Details

Part number:

IDH04G65C5

Manufacturer:

Infineon ↗

File Size:

1.14 MB

Description:

Silicon carbide diode.
SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDH04G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimark.

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IDH04G65C5 Silicon Carbide Diode Infineon

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IDH04G65C5 Features

IDH04G65C5 General Description

Datasheet Details

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