IDH08G65C5 Datasheet - Infineon

IDH08G65C5 SiC Schottky Diode

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thinwafer technology. The result is a new family of products sho.

IDH08G65C5 Features

* Revolutionary semiconductor material - Silicon Carbide

* Benchmark switching behavior

* No reverse recovery/ No forward recovery

* Temperature independent switching behavior

* High surge current capability

* Pb-free lead plating; RoHS compliant

* Qualified according to

IDH08G65C5-Infineon.pdf