IDH20G120C5 - 1200V SiC Schottky Diode

Infineon

IDH20G120C5 Datasheet Preview — Preview of IDH20G120C5 PDF

Datasheet Details

Part number	IDH20G120C5
Manufacturer	Infineon ↗
File Size	1.09 MB
Description	1200V SiC Schottky Diode
Datasheet	IDH20G120C5-Infineon.pdf

IDH20G120C5 Product details

Description

2 Table of Contents3 Maximum Ratings 4 Thermal Resistances 4 Electrical Characteristics5 Electrical Characteristics Diagram 6 Package Drawings 9 Revision History 10 Disclaimer 11 Final Data Sheet 3 Rev.2.2, 2021-03-01 IDH20G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Maximum ratings Parameter Repetitive peak reverse voltage Continues forward current for Rth(j-c,max) TC = 150°C, D=1 TC = 135°C, D=1 TC = 25°C, D=1 Surge non-repetitive forward current, sine halfwave TC=25°C, tp=10

Features

Revolutionary semiconductor material - Silicon Carbide.
No reverse recovery current / No forward recovery.
Temperature independent switching behavior.
Low forward voltage even at high operating temperature.
Tight forward voltage distribution.
Excellent thermal performance.
Extended surge current capability.
Specified dv/dt ruggedness.
Qualified according to JEDEC1) for target.

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Published: Feb 25, 2016 |