IDWD10G120C5 - 1200V Schottky Diode

Infineon

IDWD10G120C5 Datasheet Preview — Preview of IDWD10G120C5 PDF

Datasheet Details

Part number	IDWD10G120C5
Manufacturer	Infineon ↗
File Size	1.05 MB
Description	1200V Schottky Diode
Datasheet	IDWD10G120C5-Infineon.pdf

IDWD10G120C5 Product details

Description

System efficiency improvement over Si diodes Enabling higher frequency / increased power density solutions System size/cost savings due to reduced heatsink requirements and smaller magnetics Reduced EMI Highest efficiency across the entire load range Robust diode operation during surge events High reliability Related Links: www.infineon.com/SiC CASE Key performance parameters Type IDWD10G120C5 VDC IF 1200 V 10 A QC 57nC Tvj,max 175°C Marki

Features

No reverse recovery current / no forward recovery.
High surge current capability.
Temperature independent switching behaviour.
Low forward voltage even at high operating temperature.
Tight forward voltage distribution.
Specified dv/dt ruggedness.
Pb-free lead plating; RoHS compliant 1 2 Pin definition Potential.

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Published: Aug 19, 2023 |