IDWD20G120C5 Datasheet - Infineon

IDWD20G120C5 1200V Schottky Diode

* System efficiency improvement over Si diodes * Enabling higher frequency / increased power density solutions * System size/cost savings due to reduced heatsink requirements and smaller magnetics * Reduced EMI * Highest efficiency across the entire load range * Robust diode .

IDWD20G120C5 Features

* No reverse recovery current / no forward recovery

* High surge current capability

* Temperature independent switching behaviour

* Low forward voltage even at high operating temperature

* Tight forward voltage distribution

* Specified dv/dt ruggedness

* Pb-free lead pla

IDWD20G120C5-Infineon.pdf