Click to expand full text
IGC142T120T6RH
IGBT4 High Power Chip
FEATURES:
• 1200V Trench + Field Stop technology • low VCEsat • soft turn off
• positive temperature coefficient • easy paralleling
This chip is used for: • medium / high power modules
Applications: • medium / high power drives
C G
E
Chip Type
VCE ICn
Die Size
IGC142T120T6RH 1200V 150A 11.31 x 12.56 m m2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
11.31 x 12.56
11.04 x 9.80 1.31 x 0.81
mm 2
142.1 / 113.
IGC142T120T6RH Datasheet
