IGC100T65T8RM IGBT

Infineon

Description

IGC100T65T8RM IGBT3 Chip Medium Power .
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Vers.

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Datasheet Specifications

Part number: IGC100T65T8RM
Manufacturer: Infineon ↗
File Size: 190.86 KB
Datasheet: IGC100T65T8RM-Infineon.pdf
Description: IGBT

Features

* 650V Trench & Field Stop technology
* high short circuit capability, self limiting short circuit current
* positive temperature coefficient
* easy paralleling

Applications

* Recommended for:
* power modules Applications:
* drives Chip Type IGC100T65T8RM VCE 650V ICn 200A Die Size 9.73 x 10.23 mm2 C G E Package sawn on foil Mechanical Parameters Die size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max. possible chips per

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