IGC109T120T6RL Datasheet - Infineon

IGC109T120T6RL IGBT

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 All Rights Reserved Attention please! The informat.

IGC109T120T6RL Features

* 1200V Trench + Field stop technology

* low switching losses

* positive temperature coefficient

* easy paralleling This chip is used for:

* low / medium power modules Applications:

* low / medium power drives C G E Chip Type VCE ICn Die Size IG

IGC109T120T6RL-Infineon.pdf