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High Speed IGBT3 Chip
IGC10T65QE
Features: 650V Trench & Field Stop technology high speed switching series third
generation low VCE(sat) low EMI low turn-off losses positive temperature coefficient qualified according to JEDEC for target
applications
Recommended for: discrete components and
modules
Applications: uninterruptible power supplies welding converters converters with high switching
frequency
C
G E
Chip Type
VCE
ICn1)
Die Size
Package
IGC10T65QE 650V 20A 3.19 x 3.21mm2
sawn on foil
1 ) nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization
Mechanical Parameters Die size Emitter pad size Gate pad size Area total Thickness Wafer size Max.
IGC10T65QE Datasheet
