IGC109T120T6RH IGBT

Infineon

Description

IGC109T120T6RH IGBT4 High Power Chip .
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Pr.

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Datasheet Specifications

Part number: IGC109T120T6RH
Manufacturer: Infineon ↗
File Size: 67.85 KB
Datasheet: IGC109T120T6RH-Infineon.pdf
Description: IGBT

Features

* 1200V Trench + Field stop technology
* low VCE(sat)
* soft turn off
* positive temperature coefficient
* easy paralleling This chip is used for:

Applications

* medium / high power drives C G E Chip Type VCE ICn Die Size IGC109T120T6RH 1200V 110A 7.48 x 14.61 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per

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