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IGC109T120T6RH
IGBT4 High Power Chip
Features: • 1200V Trench + Field stop technology • low VCE(sat) • soft turn off • positive temperature coefficient • easy paralleling
This chip is used for: • medium / high power modules
Applications: • medium / high power drives
C G
E
Chip Type
VCE ICn
Die Size
IGC109T120T6RH 1200V 110A 7.48 x 14.61 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
7.48 x 14.61
4 x (2.761 x 6.458) 0.811 x 1.31
mm 2
109.3 / 82.
IGC109T120T6RH Datasheet
