IGC109T120T6RH

IGBT

Infineon

IGC109T120T6RH Features

* 1200V Trench + Field stop technology

* low VCE(sat)

* soft turn off

* positive temperature coefficient

* easy paralleling This chip is used for:

* medium / high power modules Applications:

* medium / high power drives C G E Chip Type VCE

IGC109T120T6RH General Description

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 All Rights Reserved Attention please! The informat.

IGC109T120T6RH Datasheet (67.85 KB)