IGC109T120T6RM Datasheet - Infineon

IGC109T120T6RM IGBT

AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007 All Rights Reserved Attention please! The informat.

IGC109T120T6RM Features

* 1200V Trench + Field stop technology

* low switching losses

* soft turn off

* positive temperature coefficient

* easy paralleling This chip is used for:

* medium power modules Applications:

* medium power drives C G E Chip Type VCE ICn

IGC109T120T6RM-Infineon.pdf