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IGC18T120T6L IGBT

IGC18T120T6L Description

IGC18T120T6L IGBT4 Low Power Chip .
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Pr.

IGC18T120T6L Features

* 1200V Trench + Field Stop technology
* low switching losses
* positive temperature coefficient
* easy paralleling This chip is used for:

IGC18T120T6L Applications

* low / medium power drives C G E Chip Type IGC18T120T6L VCE ICn 1200V 15A Die Size 4.16 x 4.34 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation fron

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