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IGC50T120T6RL
IGBT4 Low Power Chip
FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling
This chip is used for: • low / medium power modules
Applications: • low / medium power drives
C G
E
Chip Type
VCE ICn
IGC50T120T6RL 1200V 50A
Die Size 7.25 x 6.84 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size (incl. gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
7.25 x 6.84
5.74 x 5.367 0.811 x 1.31
mm 2
49.6 / 34.
IGC50T120T6RL Datasheet
