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IGC54T65T8RM IGBT

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Description

IGC54T65T8RM IGBT3 Chip Medium Power .
Recommended for power modules Type IGC54T65T8RM Die size 5.

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Features

* VCES = 650 V
* ICn = 100 A
* 650 V trench & field stop technology
* High short circuit capability, self limiting short circuit current
* Positive temperature coefficient

Applications

* Drives Product validation

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