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ILD205T - Dual Phototransistor

Datasheet Summary

Description

The ILD205T/206T/207T/211T/213T/217T are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor.

Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output.

Features

  • Two Channel Coupler.
  • SOIC-8A Surface Mountable Package.
  • Standard Lead Spacing of .05".
  • Available only on Tape and Reel Option (Conforms to EIA Standard 481-2).
  • Isolation Test Voltage, 3000 VRMS.
  • High Current Transfer Ratios ILD205T, 40.
  • 80% ILD206T, 63.
  • 125% ILD207T, 100.
  • 200% ILD211T, 20% Minimum ILD213T, 100% Minimum ILD217T, 100% Minimum at 1.0 mA.
  • High BVCEO, 70 V.
  • Compatible with Dual Wave, Va.

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Datasheet preview – ILD205T

Datasheet Details

Part number ILD205T
Manufacturer Infineon
File Size 392.46 KB
Description Dual Phototransistor
Datasheet download datasheet ILD205T Datasheet
Additional preview pages of the ILD205T datasheet.

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Full PDF Text Transcription

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ILD205T/206T/207T/211T/213T/217T Dual Phototransistor Small Outline Surface Mount Optocoupler FEATURES • Two Channel Coupler • SOIC-8A Surface Mountable Package • Standard Lead Spacing of .05" • Available only on Tape and Reel Option (Conforms to EIA Standard 481-2) • Isolation Test Voltage, 3000 VRMS • High Current Transfer Ratios ILD205T, 40 – 80% ILD206T, 63 –125% ILD207T, 100 – 200% ILD211T, 20% Minimum ILD213T, 100% Minimum ILD217T, 100% Minimum at 1.0 mA • High BVCEO, 70 V • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • Underwriters Laboratory File #E52744 (Code Letter Y) DESCRIPTION The ILD205T/206T/207T/211T/213T/217T are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor.
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