IMBF170R1K0M1 Datasheet - Infineon

1700V SiC Trench MOSFET

* VDSS = 1700 V at Tvj = 25°C

* IDDC = 5.2 A at TC = 25°C

* RDS(on) = 1000 mΩ at VGS = 12 V, Tvj = 25°C

* Optimized for fly-back topologies

* 12 V / 0 V gate-source voltage compatible with most fly-back controllers

* Very low switching losses

IMBF170R1K0M1

1.26 MB

1700v sic trench mosfet.

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IMBF170R1K0M1 1700V SiC Trench MOSFET Infineon

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