IMBF170R1K0M1 - 1700V SiC Trench MOSFET

Infineon

IMBF170R1K0M1 Datasheet Preview — Preview of IMBF170R1K0M1 PDF

Datasheet Details

Part number	IMBF170R1K0M1
Manufacturer	Infineon ↗
File Size	1.26 MB
Description	1700V SiC Trench MOSFET
Datasheet	IMBF170R1K0M1-Infineon.pdf

IMBF170R1K0M1 Product details

Description

Pin definition: Pin 1 Gate Pin 2 Kelvin sense contact Pin 3…7 Source Tab Drain Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction recommended for forward operation mode only Type IMBF170R1K0M1 Package PG-TO263-7-U01 Marking 170M11K0 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2025-03-2

Features

VDSS = 1700 V at Tvj = 25°C.
IDDC = 5.2 A at TC = 25°C.
RDS(on) = 1000 mΩ at VGS = 12 V, Tvj = 25°C.
Optimized for fly-back topologies.
12 V / 0 V gate-source voltage compatible with most fly-back controllers.
Very low switching losses.
Benchmark gate threshold voltage, VGS(th) = 4.5 V.
Fully controllable dv/dt for EMI optimization 2021-10-27 restricted Copyright © Infineon Technologies AG 2021. All rights reserved.

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Published: May 4, 2025 |