IMBF170R1K0M1 - 1700V SiC Trench MOSFET
IMBF170R1K0M1 Features
* VDSS = 1700 V at Tvj = 25°C
* IDDC = 5.2 A at TC = 25°C
* RDS(on) = 1000 mΩ at VGS = 12 V, Tvj = 25°C
* Optimized for fly-back topologies
* 12 V / 0 V gate-source voltage compatible with most fly-back controllers
* Very low switching losses
