IMBF170R650M1 - Silicon Carbide MOSFET
IMBF170R650M1 Features
* Revolutionary semiconductor material - Silicon Carbide
* Optimized for fly-back topologies
* 12V/0V gate-source voltage compatible with most fly-back controllers
* Very low switching losses
* Benchmark gate threshold voltage, VGS(th) = 4.5V
* Fully controllable dV/dt for EM
