IMBF170R650M1

Silicon Carbide MOSFET

Infineon

* Revolutionary semiconductor material - Silicon Carbide

* Optimized for fly-back topologies

* 12V/0V gate-source voltage compatible with most fly-back controllers

* Very low switching losses

* Benchmark gate threshold voltage, VGS(th) = 4.5V

* Fully controllable dV/dt for EM

IMBF170R650M1

1.24 MB

Silicon carbide mosfet.

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IMBF170R650M1 Silicon Carbide MOSFET Infineon

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