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IMBF170R650M1 Silicon Carbide MOSFET

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Description

IMBF170R650M1 IMBF170R650M1 CoolSiCâ„¢ 1700V SiC Trench MOSFET Silicon Carbide MOSFET .

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Features

* Revolutionary semiconductor material - Silicon Carbide
* Optimized for fly-back topologies
* 12V/0V gate-source voltage compatible with most fly-back controllers
* Very low switching losses
* Benchmark gate threshold voltage, VGS(th) = 4.5V
* Fully controllable dV/dt for EM

Applications

* Energy generation o Solar string inverter o Solar Central inverter
* Industrial power supplies o Industrial UPS o Industrial SMPS
* Infrastructure
* Charger o Charger Gate pin 1 Sense pin 2 Drain Source pin 3~7 Product validation Qualified for industrial applications accordi

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