IMBG120R060M1H Datasheet - Infineon

IMBG120R060M1H 1200V SiC Trench MOSFET

IMBG120R060M1H Features

* Very low switching losses

* Short circuit withstand time 3 µs

* Fully controllable dV/dt

* Benchmark gate threshold voltage, VGS(th) = 4.5V

* Robust against parasitic turn on, 0V turn-off gate voltage can be applied

* Robust body diode for hard commutation

* .XT interco

Datasheet Details

IMBG120R060M1H

1.23 MB

1200v sic trench mosfet.

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