IMBG120R060M1H - 1200V SiC Trench MOSFET
IMBG120R060M1H Features
* Very low switching losses
* Short circuit withstand time 3 µs
* Fully controllable dV/dt
* Benchmark gate threshold voltage, VGS(th) = 4.5V
* Robust against parasitic turn on, 0V turn-off gate voltage can be applied
* Robust body diode for hard commutation
* .XT interco
