IMBG120R060M1H 1200V SiC Trench MOSFET

Infineon

Description

IMBG120R060M1H IMBG120R060M1H CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology .

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Datasheet Specifications

Part number: IMBG120R060M1H
Manufacturer: Infineon ↗
File Size: 1.23 MB
Datasheet: IMBG120R060M1H-Infineon.pdf
Description: 1200V SiC Trench MOSFET

Features

* Very low switching losses
* Short circuit withstand time 3 µs
* Fully controllable dV/dt
* Benchmark gate threshold voltage, VGS(th) = 4.5V
* Robust against parasitic turn on, 0V turn-off gate voltage can be applied
* Robust body diode for hard commutation
* . XT interco

Applications

* Drives
* Infrastructure
* Charger
* Energy generation - Solar string inverter and solar optimizer
* Industrial power supplies - Industrial UPS Gate pin 1 Sense pin 2 Drain TAB Source pin 37 Product validation Qualified for industrial applications according to the relevan

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IMBG120R060M1H 1200V SiC Trench MOSFET Infineon

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