IMBG120R350M1H Datasheet - Infineon

1200V SiC Trench MOSFET

* Very low switching losses

* Short circuit withstand time 3 µs

* Fully controllable dV/dt

* Benchmark gate threshold voltage, VGS(th) = 4.5V

* Robust against parasitic turn on, 0V turn-off gate voltage can be applied

* Robust body diode for hard commutation

* .XT interco

IMBG120R350M1H

1.22 MB

1200v sic trench mosfet.

📁 Related Datasheet

IMBG120R008M2H Silicon Carbide MOSFET (Infineon)

IMBG120R012M2H 1200V SiC MOSFET (Infineon)

IMBG120R017M2H Silicon Carbide MOSFET (Infineon)

IMBG120R026M2H 1200V SiC MOSFET (Infineon)

IMBG120R040M2H Silicon Carbide MOSFET (Infineon)

IMBG120R045M1H 1200V SiC Trench MOSFET (Infineon)

IMBG120R053M2H 1200V SiC MOSFET (Infineon)

IMBG120R078M2H 1200V SiC MOSFET (Infineon)

IMBG120R090M1H 1200V SiC Trench MOSFET (Infineon)

IMBG120R234M2H Silicon Carbide MOSFET (Infineon)

TAGS

IMBG120R350M1H 1200V SiC Trench MOSFET Infineon

Image Gallery