IMT65R040M2H Datasheet - Infineon

IMT65R040M2H 650V MOSFET

IMT65R040M2H Features

* Ultra‑low switching losses

* Benchmark gate threshold voltage, VGS(th) = 4.5 V

* Robust against parasitic turn‑on even with 0 V turn‑off gate voltage

* Flexible driving voltage and compatible with bipolar driving scheme

* Robust body diode operation under ha

Datasheet Details

IMT65R040M2H

1.33 MB

650v mosfet.

📁 Related Datasheet

IMT65R048M1H MOSFET (Infineon)

IMT65R010M2H 650V SiC MOSFET (Infineon)

IMT65R015M2H SiC MOSFET (Infineon)

IMT65R020M2H 650V SiC MOSFET (Infineon)

IMT65R026M2H 650V SiC MOSFET (Infineon)

IMT65R030M1H MOSFET (Infineon)

IMT65R033M2H 650V SiC MOSFET (Infineon)

IMT65R039M1H MOSFET (Infineon)

TAGS

IMT65R040M2H IMT65R040M2H 650V MOSFET Infineon

IMT65R040M2H Distributor