* Ultra‑low switching losses
* Benchmark gate threshold voltage, VGS(th) = 4.5 V
* Robust against parasitic turn‑on even with 0 V turn‑off gate voltage
* Flexible driving voltage and compatible with bipolar driving scheme
* Robust body diode operation under ha
IMT65R040M2H Datasheet (1.33 MB)
IMT65R040M2H
1.33 MB
650v mosfet.
Public IMT65R040M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, .
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