* Ultra‑low switching losses
* Benchmark gate threshold voltage, VGS(th) = 4.5 V
* Robust against parasitic turn‑on even with 0 V turn‑off gate voltage
* Flexible driving voltage and compatible with bipolar driving scheme
* Robust body diode operation under ha
IMT65R015M2H Datasheet (1.33 MB)
IMT65R015M2H
1.33 MB
Sic mosfet.
Public IMT65R015M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, .
📁 Related Datasheet
IMT65R010M2H 650V SiC MOSFET (Infineon)
IMT65R020M2H 650V SiC MOSFET (Infineon)
IMT65R026M2H 650V SiC MOSFET (Infineon)
IMT65R030M1H MOSFET (Infineon)
IMT65R033M2H 650V SiC MOSFET (Infineon)
IMT65R039M1H MOSFET (Infineon)
IMT65R040M2H 650V MOSFET (Infineon)
IMT65R048M1H MOSFET (Infineon)
IMT65R050M2H 650V SiC MOSFET (Infineon)
IMT65R057M1H MOSFET (Infineon)
