IMT65R033M2H Datasheet - Infineon

IMT65R033M2H 650V SiC MOSFET

IMT65R033M2H Features

* Ultra‑low switching losses

* Benchmark gate threshold voltage, VGS(th) = 4.5 V

* Robust against parasitic turn‑on even with 0 V turn‑off gate voltage

* Flexible driving voltage and compatible with bipolar driving scheme

* Robust body diode operation under ha

Datasheet Details

IMT65R033M2H

1.33 MB

650v sic mosfet.

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IMT65R033M2H IMT65R033M2H 650V SiC MOSFET Infineon

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