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IMT65R039M1H

MOSFET

IMT65R039M1H Features

* Optimized switching behavior at higher currents

* Commutation robust fast body diode with low Qf

* Superior gate oxide reliability

* Tj,max=175°C and excellent thermal behavior

* Lower RDS(on) and pulse current dependency on temperature

* Increased a

IMT65R039M1H General Description

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IMT65R039M1H Datasheet (1.47 MB)

Preview of IMT65R039M1H PDF

Datasheet Details

Part number:

IMT65R039M1H

Manufacturer:

Infineon ↗

File Size:

1.47 MB

Description:

Mosfet.
IMT65R039M1H MOSFET 650 V CoolSiCª M1 SiC Trench Power Device The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Infi.

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IMT65R039M1H MOSFET Infineon

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