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IMT65R039M1H - MOSFET

IMT65R039M1H Description

IMT65R039M1H MOSFET 650 V CoolSiCª M1 SiC Trench Power Device The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Infi.

IMT65R039M1H Features

* Optimized switching behavior at higher currents
* Commutation robust fast body diode with low Qf
* Superior gate oxide reliability
* Tj,max=175°C and excellent thermal behavior
* Lower RDS(on) and pulse current dependency on temperature
* Increased a

IMT65R039M1H Applications

* SMPS
* UPS (uninterruptable power supplies)
* Solar PV inverters
* EV charging infrastructure
* Energy storage and battery formation
* Class D amplifiers Product validation Fully qualified according to JEDEC for Industrial Applications Please note:

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MOSFET Infineon
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