IMYH200R050M1H Datasheet - Infineon

2000V SiC Trench MOSFET

IMYH200R050M1H Features

* VDSS = 2000 V at Tvj = 25°C

* IDCC = 48 A at Tc = 25°C

* RDS(on) = 50 mΩ at VGS = 18 V, Tvj = 25°C

* Very low switching losses

* Benchmark gate threshold voltage, VGS(th) = 4.5 V

* Robust body diode for hard commutation

* .XT interconnecti

IMYH200R050M1H General Description

1 * drain 2 * source 3 * Kelvin sense contact 4 * gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L) Type IMYH200R050M1H Package PG-TO247-4-PLUS-NT14 Marking 20M1H050 Datasheet www.inf.

IMYH200R050M1H Datasheet (1.78 MB)

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Datasheet Details

Part number:

IMYH200R050M1H

Manufacturer:

Infineon ↗

File Size:

1.78 MB

Description:

2000v sic trench mosfet.
IMYH200R050M1H CoolSiC™ 2000 V SiC Trench MOSFET CoolSiC™ 2000 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology Feat.

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IMYH200R050M1H 2000V SiC Trench MOSFET Infineon

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IMYH200R050M1H Features

IMYH200R050M1H General Description

Datasheet Details

File Size:

Description:

IMYH200R050M1H Distributor