IMYH200R050M1H - 2000V SiC Trench MOSFET

Infineon

IMYH200R050M1H Datasheet Preview — Preview of IMYH200R050M1H PDF

Datasheet Details

Part number	IMYH200R050M1H
Manufacturer	Infineon ↗
File Size	1.78 MB
Description	2000V SiC Trench MOSFET
Datasheet	IMYH200R050M1H-Infineon.pdf

IMYH200R050M1H Product details

Description

1 drain 2 source 3 Kelvin sense contact 4 gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L) Type IMYH200R050M1H Package PG-TO247-4-PLUS-NT14 Marking 20M1H050 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2023-01-16 IMYH200R050M1H CoolSiC™ 2000 V SiC Trench MOSFET Table of contents Table o

Features

VDSS = 2000 V at Tvj = 25°C.
IDCC = 48 A at Tc = 25°C.
RDS(on) = 50 mΩ at VGS = 18 V, Tvj = 25°C.
Very low switching losses.
Benchmark gate threshold voltage, VGS(th) = 4.5 V.
Robust body diode for hard commutation.

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Published: Apr 16, 2025 |