IMYH200R100M1H 2000V SiC Trench MOSFET

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Description

IMYH200R100M1H CoolSiC™ 2000 V SiC Trench MOSFET CoolSiC™ 2000 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology Feat.
1. drain 2. source 3. Kelvin sense contact 4. gate Note: the source and sense pins are not exchangeable, thei.

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Datasheet Specifications

Part number: IMYH200R100M1H
Manufacturer: Infineon ↗
File Size: 1.80 MB
Datasheet: IMYH200R100M1H-Infineon.pdf
Description: 2000V SiC Trench MOSFET

Features

* VDSS = 2000 V at Tvj = 25°C
* IDCC = 26 A at Tc = 25°C
* RDS(on) = 100 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Benchmark gate threshold voltage, VGS(th) = 4.5 V
* Robust body diode for hard commutation
* . XT interconnect

Applications

* String inverter
* Solar power optimizer
* EV-Charging Product validation
* Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
* Please also note the application note AN2019-05 for power and thermal cycling Descripti

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