IMYH200R100M1H Datasheet - Infineon

IMYH200R100M1H 2000V SiC Trench MOSFET

1 * drain 2 * source 3 * Kelvin sense contact 4 * gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L) Type IMYH200R100M1H Package PG-TO247-4-PLUS-NT14 Marking 20M1H100 Datasheet www.inf.

IMYH200R100M1H Features

* VDSS = 2000 V at Tvj = 25°C

* IDCC = 26 A at Tc = 25°C

* RDS(on) = 100 mΩ at VGS = 18 V, Tvj = 25°C

* Very low switching losses

* Benchmark gate threshold voltage, VGS(th) = 4.5 V

* Robust body diode for hard commutation

* .XT interconnect

IMYH200R100M1H Datasheet (1.80 MB)